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| BLA1011-300 Avionics LDMOS transistors Rev. 01 -- 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit; tp = 50 s; = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.5 D (%) 57 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 s and a of 2 %: N Output power = 300 W N Power gain = 16.5 dB (typ) N Efficiency = 57 % (typ) I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for operation in 1030 MHz to 1090 MHz band I Internally matched for ease of use 1.3 Applications I RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency band NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Symbol 1 2 3 sym112 [1] connected to flange 3. Ordering information Table 3. Ordering information Package Name BLA1011-300 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT957A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +15 15 +150 200 Unit V V A C C 5. Thermal characteristics Table 5. Symbol Zth(j-h) Thermal characteristics Parameter transient thermal impedance from junction to heatsink Conditions Tcase = 25 C; tp = 50 s; = 2 %; PL = 300 W Typ 0.1 Max 0.15 Unit K/W BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 2 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage Conditions VGS = 0 V; ID = 3.75 mA VDS = 20 V; ID = 375 mA Min 65 5.2 50 Typ 5.6 5.48 63 15 55 Max 6.2 3.3 73 60 80 Unit V V V A A nA S m gate-source quiescent VDS = 32 V; ID = 150 mA voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance VGS = 0 V; VDS = 32 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 20 V; ID = 24 A VGS = VGS(th) + 6 V; ID =13.5 A 7. Application information Table 7. Application information Mode of operation: Pulsed RF; tp = 50 s; = 2 %; VDS = 32 V; IDq = 150 mA; Tcase = 25 C; unless otherwise specified. Symbol PL Gp RLin D tr tf Pdroop(pulse) Parameter output power power gain input return loss drain efficiency rise time fall time pulse droop power PL = 300 W PL = 300 W PL = 300 W PL = 300 W PL = 300 W PL = 300 W Conditions Min 300 15 52 Typ 16.5 10 57 30 5 0 Max 50 50 0.2 Unit W dB dB % ns ns dB BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 3 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors Typical impedance ZS 4.25 - j3.57 4.24 - j3.56 4.47 - j3.71 ZL 1.27 - j0.33 1.04 - j0.41 0.91 - j0.60 Table 8. f MHz 1030 1060 1090 drain ZL gate ZS 001aag189 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLA1011-300 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 150 mA; PL = 300 W; f = 1030 MHz to 1090 MHz. 001aag190 001aag191 80 D (%) 60 20 Gp (dB) 16 (2) (3) (1) 12 40 (1) (2) (3) 8 20 4 0 0 100 200 300 PL (W) 400 0 0 100 200 300 PL (W) 400 (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %. (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %. Fig 2. Drain efficiency as functions of load power; typical values Fig 3. Power gain as a function of load power; typical values BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 4 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 400 PL (W) 300 (3) (1) (2) 001aag192 20 Gp (dB) 18 D 001aag193 70 D (%) 60 Gp 16 50 200 14 40 100 12 30 0 0 2 4 6 8 Pi (W) 10 10 1020 1040 1060 1080 f (MHz) 20 1100 (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %. VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %. Fig 4. Load power as a function of input power; typical values Fig 5. Power gain and drain efficiency as functions of frequency; typical values BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 5 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT957A D A F 3 D1 U1 q 1 B C c L H U2 p w1 M E1 A M E B M A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.67 4.08 b 12.83 12.57 c 0.15 0.10 0.006 0.004 D 22.07 21.62 0.869 0.851 D1 22.04 21.64 0.868 0.852 E 9.53 9.27 0.375 0.365 E1 9.55 9.25 0.376 0.364 F 1.14 0.89 0.045 0.035 H 19.94 18.92 0.785 0.745 L 5.33 4.31 0.210 0.170 P 3.38 3.12 0.133 0.123 Q 1.70 1.45 0.067 0.057 q 27.94 1.100 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.25 0.01 0.184 0.505 0.1605 0.495 OUTLINE VERSION SOT957A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-06-29 07-03-01 Fig 6. Package outline SOT957A BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 6 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 9. Abbreviations Table 9. Acronym IFF LDMOS LDMOST RF TCAS VSWR Abbreviations Description Identification Friend or Foe Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Traffic Collision Avoidance System Voltage Standing Wave Ratio 10. Revision history Table 10. Revision history Release date 20070403 Data sheet status Product data sheet Change notice Supersedes Document ID BLA1011-300_1 BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 7 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BLA1011-300_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 3 April 2007 8 of 9 NXP Semiconductors BLA1011-300 Avionics LDMOS transistors 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 2 2 2 2 3 3 4 6 7 7 8 8 8 8 8 8 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 April 2007 Document identifier: BLA1011-300_1 |
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